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| LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1 Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbbCc and high gain.(Typ.6ps) 3.Small NF. 1 2 3 COLLECTOR 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 30 18 3 50 0.2 150 -55~+150 Unit V V V mA W C C 1 BASE 2 EMITTER DEVICE MARKING L2SC3837LT1=AP ELECTRICAL CHARACTERISTICS(TA = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbbCc NF Min. 30 18 3 56 600 Typ 1500 0.9 6 4.5 Max. 0.5 0.5 0.5 180 1.5 13 Unit V V V A A V MHz pF ps dB Conditions IC=10A IC=1mA IE=10A VCB=10V VEB= 2 V IC/IB=20mA/4mA VCE/IC=10V/10mA VCB=10V, IC=10mA, f=200MHz VCB=10V, IE=0A, f=1MHz VCB=10V, IC=10mA, f=31.8MHz VCE=12V, IC=2mA, f=200MHz,Rg=50 L2SC3837LT1 -1/2 LESHAN RADIO COMPANY, LTD. L2SC3837LT1 SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 C D H K J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC3837LT1 -2/2 |
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